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I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector

Identifieur interne : 001A53 ( Main/Repository ); précédent : 001A52; suivant : 001A54

I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector

Auteurs : RBID : Pascal:13-0015962

Descripteurs français

Pascal (Inist)
- Arséniure de gallium, Composé III-V, Semiconducteur III-V, Point quantique, Nanomatériau, Détecteur IR, Réponse spectrale, Arséniure d'indium, Puits quantique, Effet tunnel, Etat excité, Mécanisme croissance, Tension polarisation, Courant photoélectrique, Tellurure de gallium, Arséniure d'aluminium, Photoconductivité, Electrode commande, Courant obscurité, Gain courant, Condition opératoire, Mode opératoire, Aluminium Gallium Arséniure Mixte, GaAs, InAs, AlGaAs, 7363K, 8107T.

English descriptors

KwdEn :
- Aluminium Gallium Arsenides Mixed, Aluminium arsenides, Bias voltage, Current gain, Dark current, Excited states, Gallium arsenides, Gallium tellurides, Gates, Growth mechanism, III-V compound, III-V semiconductors, Indium arsenides, Infrared detectors, Nanostructured materials, Operating conditions, Operating mode, Photoconductivity, Photocurrents, Quantum dots, Quantum wells, Spectral response, Tunnel effect.

Abstract

A new infrared detector design, henceforth referred to as a lateral quantum dot infrared photodetector (LQDIP), with the potential for a tunable internal spectral response was investigated. In this design, InAs quantum dots are buried in a GaAs quantum well, which is in turn tunnel-coupled to a second GaAs quantum well. Photoexcited electrons from the quantum dots are expected to tunnel over to the second well, where they are then swept out via a lateral (perpendicular to the growth direction) bias voltage. The lateral photocurrent is in part directed to tunnel into the second quantum well by the depletion field of a narrow pinch-off gate, applied vertically (parallel to the growth direction). Under a proper biasing arrangement, this detector architecture is expected to exhibit the ability to tune to select infrared frequencies as well as operate with reduced dark currents and unity gain in the second well. The LQDIP detector architecture, operating principles and conditions, and preliminary results of I-V, photocurrent, and differential conductance measurements are all discussed.

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Le document en format XML

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<term>Current gain</term>
<term>Dark current</term>
<term>Excited states</term>
<term>Gallium arsenides</term>
<term>Gallium tellurides</term>
<term>Gates</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Infrared detectors</term>
<term>Nanostructured materials</term>
<term>Operating conditions</term>
<term>Operating mode</term>
<term>Photoconductivity</term>
<term>Photocurrents</term>
<term>Quantum dots</term>
<term>Quantum wells</term>
<term>Spectral response</term>
<term>Tunnel effect</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure de gallium</term>
<term>Composé III-V</term>
<term>Semiconducteur III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Détecteur IR</term>
<term>Réponse spectrale</term>
<term>Arséniure d'indium</term>
<term>Puits quantique</term>
<term>Effet tunnel</term>
<term>Etat excité</term>
<term>Mécanisme croissance</term>
<term>Tension polarisation</term>
<term>Courant photoélectrique</term>
<term>Tellurure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>Photoconductivité</term>
<term>Electrode commande</term>
<term>Courant obscurité</term>
<term>Gain courant</term>
<term>Condition opératoire</term>
<term>Mode opératoire</term>
<term>Aluminium Gallium Arséniure Mixte</term>
<term>GaAs</term>
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<term>AlGaAs</term>
<term>7363K</term>
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<front><div type="abstract" xml:lang="en">A new infrared detector design, henceforth referred to as a lateral quantum dot infrared photodetector (LQDIP), with the potential for a tunable internal spectral response was investigated. In this design, InAs quantum dots are buried in a GaAs quantum well, which is in turn tunnel-coupled to a second GaAs quantum well. Photoexcited electrons from the quantum dots are expected to tunnel over to the second well, where they are then swept out via a lateral (perpendicular to the growth direction) bias voltage. The lateral photocurrent is in part directed to tunnel into the second quantum well by the depletion field of a narrow pinch-off gate, applied vertically (parallel to the growth direction). Under a proper biasing arrangement, this detector architecture is expected to exhibit the ability to tune to select infrared frequencies as well as operate with reduced dark currents and unity gain in the second well. The LQDIP detector architecture, operating principles and conditions, and preliminary results of I-V, photocurrent, and differential conductance measurements are all discussed.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector</s1>
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<fC01 i1="01" l="ENG"><s0>A new infrared detector design, henceforth referred to as a lateral quantum dot infrared photodetector (LQDIP), with the potential for a tunable internal spectral response was investigated. In this design, InAs quantum dots are buried in a GaAs quantum well, which is in turn tunnel-coupled to a second GaAs quantum well. Photoexcited electrons from the quantum dots are expected to tunnel over to the second well, where they are then swept out via a lateral (perpendicular to the growth direction) bias voltage. The lateral photocurrent is in part directed to tunnel into the second quantum well by the depletion field of a narrow pinch-off gate, applied vertically (parallel to the growth direction). Under a proper biasing arrangement, this detector architecture is expected to exhibit the ability to tune to select infrared frequencies as well as operate with reduced dark currents and unity gain in the second well. The LQDIP detector architecture, operating principles and conditions, and preliminary results of I-V, photocurrent, and differential conductance measurements are all discussed.</s0>
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<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
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<fC02 i1="02" i2="3"><s0>001B70C63K</s0>
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<s2>NK</s2>
<s5>01</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>01</s5>
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<fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>03</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>03</s5>
</fC03>
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<s5>04</s5>
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<s5>04</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s2>NK</s2>
<s5>08</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>13</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s2>NK</s2>
<s5>15</s5>
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<s2>NK</s2>
<s5>15</s5>
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<s2>NK</s2>
<s5>16</s5>
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<s5>31</s5>
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<s5>32</s5>
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<s5>32</s5>
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<s5>32</s5>
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<s5>33</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Operating conditions</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Condición operatoria</s0>
<s5>33</s5>
</fC03>
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<s5>34</s5>
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<s5>34</s5>
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<s5>34</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>35</s5>
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<fC03 i1="23" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>35</s5>
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<fC03 i1="23" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>35</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>46</s5>
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<s4>INC</s4>
<s5>47</s5>
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<fC03 i1="26" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
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<s4>INC</s4>
<s5>65</s5>
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<fC03 i1="28" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
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<fN21><s1>007</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1>
<s2>30</s2>
<s3>Chicago, IL USA</s3>
<s4>2011-10-04</s4>
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I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector

I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector

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